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Title: InAlGaAs/AlGaAs Superlattices for Polarized Electron Photocathodes

Conference ·
OSTI ID:878779

Highly efficient emitters of polarized electrons based on the InAlGaAs/AlGaAs superlattice give an optimistic prognosis to explorations of such structures as the sources for accelerators. A new set of these SL structures with minimized conduction band offset was designed and recently tested. A new technology of surface protection in MBE growth leads to a significantly reduced heat-cleaning temperature. At these lowered cleaning temperatures, the thermal degradation of the working structure parameters is avoided. As a result a polarization P of up to 91% at corresponding quantum efficiency (QE) of 0.3% was achieved at room temperature.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
878779
Report Number(s):
SLAC-PUB-11403; TRN: US0602576
Resource Relation:
Conference: Contributed to 13th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russia, 20-25 Jun 2005
Country of Publication:
United States
Language:
English