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High Performance Polarized Electron Photocathodes Based on InGaAlAs/AlGaAs Superlattices

Technical Report ·
DOI:https://doi.org/10.2172/839709· OSTI ID:839709

Highly efficient emitters of polarized electrons based on the InAlGaAs/AlGaAs superlattice give an optimistic prognosis to explorations of such structures as the sources for accelerators. A new set of these SL structures with minimized conduction band offset was designed and recently tested. A new technology of surface protection in MBE growth leads to a significantly reduced heat-cleaning temperature. At these lowered cleaning temperatures, the thermal degradation of the working structure parameters is avoided. As a result a polarization P of up to 91% at corresponding quantum efficiency (QE) of 0.3% was achieved at room temperature. A 50% increase in the photocathode lifetime has been achieved with Sb coverage.

Research Organization:
Stanford Linear Accelerator Center (SLAC), Menlo Park, CA
Sponsoring Organization:
SC
DOE Contract Number:
AC02-76SF00515
OSTI ID:
839709
Report Number(s):
SLAC-PUB-10891
Country of Publication:
United States
Language:
English

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