InAlGaAs/AlGaAs Superlattices for Polarized Electron Photocathodes
Conference
·
OSTI ID:878779
Highly efficient emitters of polarized electrons based on the InAlGaAs/AlGaAs superlattice give an optimistic prognosis to explorations of such structures as the sources for accelerators. A new set of these SL structures with minimized conduction band offset was designed and recently tested. A new technology of surface protection in MBE growth leads to a significantly reduced heat-cleaning temperature. At these lowered cleaning temperatures, the thermal degradation of the working structure parameters is avoided. As a result a polarization P of up to 91% at corresponding quantum efficiency (QE) of 0.3% was achieved at room temperature.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 878779
- Report Number(s):
- SLAC-PUB-11403
- Country of Publication:
- United States
- Language:
- English
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