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Multiphonon Resonance Raman Scattering in InGaN

Journal Article · · Physical Review, B: Condensed Matter
OSTI ID:878533
In In{sub x}Ga{sub 1-x}N epitaxial films with 0.37 < x < 1 and free electron concentrations in the 10{sup 18} cm{sup -3} range, strong resonant Raman scattering of A{sub 1}(LO) phonon is observed for laser excitation in Raman scattering when excited above the direct band gaps. Examination of films with direct band gaps between 0.7 and 1.9 eV using laser energies from 1.9 to 2.7 eV shows that the resonance is broad, extending to up to 2 eV above the direct gap. Multiphonon Raman scattering with up to 5 LO phonons is also observed for excitation close to resonance in alloy samples; this is the highest number of phonon overtones ever observed for multiphonon scattering in a III-V compound under ambient conditions. Coupling of the electron plasmon to the LO phonon to form a longitudinal plasmon coupled mode of the type which is observed in the Raman spectra of n-GaN, appears not to occur in In{sub x}Ga{sub 1-x}N for x > 0.37.
Research Organization:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division; Department ofDefense. Office of Naval Research Contract N000149910936, NationalReconnaissance Office. Director's Innovation InitiativeProgram
DOE Contract Number:
AC02-05CH11231
OSTI ID:
878533
Report Number(s):
LBNL--57953; BnR: 400403909
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Vol. 72; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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