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Investigation of E{sub 1}(LO) phonon-plasmon coupled modes and critical points in In{sub 1-x}Ga{sub x}N thin films by optical reflectance measurements

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3428368· OSTI ID:21347416
; ; ;  [1];  [2];  [3];  [4]
  1. Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202 (United States)
  2. Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202 (United States)
  3. Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States)
  4. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14583 (United States)
Low energy optical modes of molecular beam epitaxy-grown In{sub 1-x}Ga{sub x}N thin films with 0<=x<=0.6 are investigated using infrared reflectance measurements. We found that the reflectance of the films for wave vectors in the range from 600 to 800 cm{sup -1} is determined by the high energy E{sub 1}(LO)-plasmon coupled modes. In the higher energy regime of the UV-visible reflectance spectrum of InN, critical points with energies 4.75, 5.36, and 6.12 eV belonging to A and B structures are observed. The energies of these critical points increase with increasing values of x, similar to the band gap energy of these films.
OSTI ID:
21347416
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 96; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English