Visible light emitting vertical cavity surface emitting lasers
A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5,428,634/A/
- Application Number:
- PAN: 7-972,820
- OSTI ID:
- 87729
- Resource Relation:
- Other Information: PBD: 27 Jun 1995
- Country of Publication:
- United States
- Language:
- English
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Visible light surface emitting semiconductor laser
Visible light surface emitting semiconductor laser