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U.S. Department of Energy
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Rhombohedral AlPt films formed by self-propagating, high temperature synthesis.

Technical Report ·
DOI:https://doi.org/10.2172/875985· OSTI ID:875985

High-purity AlPt thin films prepared by self-propagating, high temperature combustion synthesis show evidence for a new rhombohedral phase. Sputter deposited Al/Pt multilayers of various designs are reacted at different rates in air and in vacuum, and each form a new trigonal/hexagonal aluminide phase with unit cell parameters a = 15.571(8) {angstrom}, c = 5.304(1) {angstrom}, space group R-3 (148), and Z, the number of formula units within a unit cell, = 39. The lattice is isostructural to that of the AlPd R-3 lattice as reported by Matkovic and Schubert (Matkovic, 1977). Reacted films have a random in-plane crystallographic texture, a modest out-of-plane (001) texture, and equiaxed grains with dimensions on the order of film thickness.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
875985
Report Number(s):
SAND2005-7287
Country of Publication:
United States
Language:
English