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Title: Method of growing GaN films with a low density of structural defects using an interlayer

Patent ·
OSTI ID:875113
 [1]
  1. Richmond, CA
+ Show Author Affiliations

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
US 6534332
OSTI ID:
875113
Country of Publication:
United States
Language:
English

References (7)

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN journal March 1998
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure journal February 2001
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures journal October 1997
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer journal February 1986
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition journal August 1998
TEM Study of Defects in Laterally Overgrown GaN Layers journal January 1999
Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth journal September 1999

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Related Subjects

method
growing
films
density
structural
defects
interlayer
dramatic
reduction
dislocation
obtained
insertion
single
grown
intermediate
temperature
it-il
growth
initial
process
characterization
results
aimed
understanding
mechanisms
percentage
threading
dislocations
epilayer
found
bend
near
propagate
top
layer
grows
lateral
mode
studies
similar
described
epitaxial
overgrowth
notable
difference
absence
coalescence
boundaries
top layer
intermediate temperature
/438/148/