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Method of growing GaN films with a low density of structural defects using an interlayer

Patent ·
OSTI ID:875113
 [1]
  1. Richmond, CA
+ Show Author Affiliations

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
US 6534332
OSTI ID:
875113
Country of Publication:
United States
Language:
English

References (7)

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer journal February 1986
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN journal March 1998
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures journal October 1997
Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth journal September 1999
TEM Study of Defects in Laterally Overgrown GaN Layers journal January 1999
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition journal August 1998
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure journal February 2001

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Related Subjects

/438/148/
absence
aimed
bend
boundaries
characterization
coalescence
defects
density
described
difference
dislocation
dislocations
dramatic
epilayer
epitaxial
films
found
growing
grown
grows
growth
initial
insertion
interlayer
intermediate
intermediate temperature
it-il
lateral
layer
mechanisms
method
mode
near
notable
obtained
overgrowth
percentage
process
propagate
reduction
results
similar
single
structural
studies
temperature
threading
top
top layer
understanding