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Title: Plasma & reactive ion etching to prepare ohmic contacts

Abstract

A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

Inventors:
 [1]
  1. (Conifer, CO)
Publication Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
874774
Patent Number(s):
US 6458254
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
plasma; reactive; etching; prepare; ohmic; contacts; method; low-resistance; electrical; contact; metal; layer; p-type; cdte; surface; comprising; placing; cdscdte; chamber; evacuating; backfilling; argon; gas; pressure; sufficient; ignition; generating; energizing; cathode; connected; power; supply; enable; interact; presence; radio-frequency; dc; self-bias; voltage; p-cdte; power supply; electrical contact; reactive gas; plasma etch; /204/438/

Citation Formats

Gessert, Timothy A. Plasma & reactive ion etching to prepare ohmic contacts. United States: N. p., 2002. Web.
Gessert, Timothy A. Plasma & reactive ion etching to prepare ohmic contacts. United States.
Gessert, Timothy A. Tue . "Plasma & reactive ion etching to prepare ohmic contacts". United States. https://www.osti.gov/servlets/purl/874774.
@article{osti_874774,
title = {Plasma & reactive ion etching to prepare ohmic contacts},
author = {Gessert, Timothy A.},
abstractNote = {A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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