Plasma & reactive ion etching to prepare ohmic contacts
Patent
·
OSTI ID:874774
- Conifer, CO
A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.
- Research Organization:
- Midwest Research Institute
- DOE Contract Number:
- AC36-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 6458254
- OSTI ID:
- 874774
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion-beam treatment to prepare surfaces of p-CdTe films
Method for fabricating devices with DC bias-controlled reactive ion etching
Plasma-induced damage of GaAs during etching of refractory metal contacts
Patent
·
Sun Dec 31 23:00:00 EST 2000
·
OSTI ID:873954
Method for fabricating devices with DC bias-controlled reactive ion etching
Patent
·
Mon Jan 28 23:00:00 EST 1985
·
OSTI ID:5618608
Plasma-induced damage of GaAs during etching of refractory metal contacts
Journal Article
·
Mon May 01 00:00:00 EDT 1995
· Journal of Vacuum Science and Technology, A
·
OSTI ID:57118
Related Subjects
/204/438/
argon
backfilling
cathode
cdscdte
cdte
chamber
comprising
connected
contact
contacts
dc
electrical
electrical contact
enable
energizing
etching
evacuating
gas
generating
ignition
interact
layer
low-resistance
metal
method
ohmic
p-cdte
p-type
placing
plasma
plasma etch
power
power supply
prepare
presence
pressure
radio-frequency
reactive
reactive gas
self-bias
sufficient
supply
surface
voltage
argon
backfilling
cathode
cdscdte
cdte
chamber
comprising
connected
contact
contacts
dc
electrical
electrical contact
enable
energizing
etching
evacuating
gas
generating
ignition
interact
layer
low-resistance
metal
method
ohmic
p-cdte
p-type
placing
plasma
plasma etch
power
power supply
prepare
presence
pressure
radio-frequency
reactive
reactive gas
self-bias
sufficient
supply
surface
voltage