Method for fabricating devices with DC bias-controlled reactive ion etching
Patent
·
OSTI ID:5618608
A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.
- Assignee:
- AT and T Bell Laboratories
- Patent Number(s):
- US 4496448
- OSTI ID:
- 5618608
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRODES
ETCHING
FABRICATION
MATERIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRODES
ETCHING
FABRICATION
MATERIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING