Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Thin film dielectric composite materials

Patent ·
OSTI ID:874702
 [1];  [1];  [1];  [1]
  1. Los Alamos, NM
+ Show Author Affiliations

A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM
DOE Contract Number:
W-7405-ENG-36
Assignee:
The Regents of the University of California (Los Alamos, NM)
Patent Number(s):
US 6444336
OSTI ID:
874702
Country of Publication:
United States
Language:
English

References (2)

Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications journal July 2000
Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices journal January 2000

Similar Records

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films
Patent · Tue May 19 00:00:00 EDT 1998 · OSTI ID:871557
Oriented niobate ferroelectric thin films for electrical and optical devices
Patent · Sun Dec 31 23:00:00 EST 2000 · OSTI ID:873636
Tungsten-doped thin film materials
Patent · Mon Dec 08 23:00:00 EST 2003 · OSTI ID:1174612

Related Subjects

/428/501/
002
01
015
02
023
024
03
04
045
07
075
09
basub1-x
batiosub3subx
batisub1-x
casubx
cdsubx
component
components
composite
composite material
comprising
consisting
crystal
crystal phase
described
dielectric
film
formed
hfsubx
lasubx
material
materials
nbsub05
omposite materials
osub3
osub3sub1-x
pbcosub05
pbfeosub05
pbfesub05
pbmgsub05
pbsub1-13x
pbsub1-x
pbsubx
pbtiosub3sub-
pbtiosub3subx
phases
selected
snsubx
srsub1-x
srsubx
substrates
suitable substrate
tasub05
tiosub2
tiosub3
tiosub302x
wsub05
zrsubx