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Tungsten-doped thin film materials

Patent ·
OSTI ID:1174612
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A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Number(s):
6,660,414
Application Number:
09/299,805
OSTI ID:
1174612
Country of Publication:
United States
Language:
English

References (6)

The combinatorial synthesis and evaluation of functional materials journal August 1997
Identification and optimization of advanced phosphors using combinatorial libraries journal June 1997
A Combinatorial Approach to Materials Discovery journal June 1995
Comparative Study of Amorphous and Crystalline (Ba, Sr)TiO 3 Thin Films Deposited by Laser Ablation journal September 1993
A Class of Cobalt Oxide Magnetoresistance Materials Discovered with Combinatorial Synthesis journal October 1995
Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries journal August 1998

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36 MATERIALS SCIENCE