Electron gas grid semiconductor radiation detectors

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874228

Lee, Edwin Y ^[1]; James, Ralph B ^[1]

---

1. Livermore, CA

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Livermore, CA)
• Patent Number(s): US 6344650
• OSTI ID: 874228
• Country of Publication: United States
• Language: English

Related Subjects

electron
gas
grid
semiconductor
radiation
detectors
detector
eggsrad
useful
gamma-ray
x-ray
spectrometers
imaging
systems
described
employs
doping
variation
material
form
two-dimensional
allow
transistor
action
provides
superior
energy
resolution
detection
sensitivity
conventional
electron-only
utilize
electrode
near
anode
embodiment
incorporates
delta-doped
layers
adjacent
produce
internal
free
external
attached
quantum
formed
forms
embodiments
similar
involve
graded
bandgap
changing
composition
increase
decrease
conduction
band
semiconductor material
radiation detector
free electron
radiation detection
x-ray spectrometer
imaging systems
/250/257/