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Title: Wafer-fused semiconductor radiation detector

Abstract

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode andmore » an anode being formed on opposite ends of the semiconductor pieces.« less

Inventors:
 [1];  [1]
  1. (Livermore, CA)
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
874253
Patent Number(s):
US 6350989
Assignee:
Sandia National Laboratories (Livermore, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
wafer-fused; semiconductor; radiation; detector; useful; gamma-ray; x-ray; spectrometers; imaging; systems; fabricated; wafer; fusion; insert; electrically; conductive; grid; typically; comprising; metal; solid; pieces; cathode; negative; electrode; anode; positive; fused; functions; commonly; frisch; inserted; vacuum; materials; sizes; thicknesses; utilize; wide; range; metals; conducting; form; optimize; performance; constrained; structural; dissimilarity; individual; basically; formed; example; etching; spaced; grooves; partially; filling; selected; electrical; conductor; forms; fusing; grooved; piece; opposite; electrically conductive; semiconductor material; positive electrode; negative electrode; radiation detector; wide range; electrically conducting; conducting material; x-ray spectrometer; imaging systems; /250/257/

Citation Formats

Lee, Edwin Y., and James, Ralph B. Wafer-fused semiconductor radiation detector. United States: N. p., 2002. Web.
Lee, Edwin Y., & James, Ralph B. Wafer-fused semiconductor radiation detector. United States.
Lee, Edwin Y., and James, Ralph B. Tue . "Wafer-fused semiconductor radiation detector". United States. https://www.osti.gov/servlets/purl/874253.
@article{osti_874253,
title = {Wafer-fused semiconductor radiation detector},
author = {Lee, Edwin Y. and James, Ralph B.},
abstractNote = {Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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