Optical method for the characterization of laterally-patterned samples in integrated circuits

Maris, Humphrey J

Optical method for the characterization of laterally-patterned samples in integrated circuits

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:874134

Maris, Humphrey J ^[1]

Barrington, RI

Disclosed is a method for characterizing a sample having a structure disposed on or within the sample, comprising the steps of applying a first pulse of light to a surface of the sample for creating a propagating strain pulse in the sample, applying a second pulse of light to the surface so that the second pulse of light interacts with the propagating strain pulse in the sample, sensing from a reflection of the second pulse a change in optical response of the sample, and relating a time of occurrence of the change in optical response to at least one dimension of the structure.

Research Organization:: Brown University

DOE Contract Number:: FG02-86ER45267

Assignee:: Brown University Research Foundation (Providence, RI)

Patent Number(s):: US 6321601

OSTI ID:: 874134

Country of Publication:: United States

Language:: English

References (13)

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Physics of ultrafast phenomena in solid state plasmas Elci, Ahmet; Smirl, Arthur L.; Leung, C. Y. Solid-State Electronics, Vol. 21, Issue 1 https://doi.org/10.1016/0038-1101(78)90130-2	journal	January 1978
Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements Sumie, Shingo; Takamatsu, Hiroyuki; Morimoto, Tsutomu Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.357074	journal	November 1994
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Ion implant monitoring with thermal wave technology Smith, W. Lee; Rosencwaig, Allan; Willenborg, David L. Applied Physics Letters, Vol. 47, Issue 6 https://doi.org/10.1063/1.96079	journal	September 1985
Thermal and plasma wave depth profiling in silicon Opsal, Jon; Rosencwaig, Allan Applied Physics Letters, Vol. 47, Issue 5 https://doi.org/10.1063/1.96105	journal	September 1985
Carrier lifetime versus ion‐implantation dose in silicon on sapphire Doany, F. E.; Grischkowsky, D.; Chi, C. ‐C. Applied Physics Letters, Vol. 50, Issue 8 https://doi.org/10.1063/1.98173	journal	February 1987
Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K Stoner, R. J.; Maris, H. J. Physical Review B, Vol. 48, Issue 22 https://doi.org/10.1103/PhysRevB.48.16373	journal	December 1993
Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium Auston, D. H.; Shank, C. V. Physical Review Letters, Vol. 32, Issue 20 https://doi.org/10.1103/PhysRevLett.32.1120	journal	May 1974
Measurements of the Kapitza conductance between diamond and several metals Stoner, R. J.; Maris, H. J.; Anthony, T. R. Physical Review Letters, Vol. 68, Issue 10 https://doi.org/10.1103/PhysRevLett.68.1563	journal	March 1992
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors Sumie, Shingo; Takamatsu, Hiroyuki; Nishimoto, Yoshiro Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 11 https://doi.org/10.1143/JJAP.31.3575	journal	November 1992

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Optical method for the characterization of laterally-patterned samples in integrated circuits

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