Oriented conductive oxide electrodes on SiO2/Si and glass

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:874103

Jia, Quanxi ^[1]; Arendt, Paul N ^[1]

---

1. Los Alamos, NM

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: The Regents of the University of California (Los Alamos, NM)
• Patent Number(s): US 6312819
• OSTI ID: 874103
• Country of Publication: United States
• Language: English

Related Subjects

oriented
conductive
oxide
electrodes
sio2si
glass
film
structure
provided
including
silicon
substrate
layer
dioxide
surface
cubic
material
deposited
ion-beam-assisted-deposition
characterized
biaxially
yttria-stabilized
zirconia
additional
layers
ruthenium
lanthanum
strontium
cobalt
intermediate
cerium
employed
barium
titanium
method
forming
structures
temperature
deposition
dioxidesilicon
oxide layer
silicon substrate
conductive oxide
oxide electrode
/428/117/