Oriented conductive oxide electrodes on SiO2/Si and glass

Jia, Quanxi; Arendt, Paul N

Oriented conductive oxide electrodes on SiO2/Si and glass

Patent · Sun Dec 31 23:00:00 EST 2000

OSTI ID:874103

Jia, Quanxi ^[1]; Arendt, Paul N ^[1]

Los Alamos, NM

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM

DOE Contract Number:: W-7405-ENG-36

Assignee:: The Regents of the University of California (Los Alamos, NM)

Patent Number(s):: US 6312819

OSTI ID:: 874103

Country of Publication:: United States

Language:: English

References (8)

Deposition of epitaxial yttria-stabilized zirconia on single-crystal Si and subsequent growth of an amorphous SiO ₂ interlayer Jia, Q. X.; Wu, X. D.; Zhou, D. S. Philosophical Magazine Letters, Vol. 72, Issue 6 https://doi.org/10.1080/09500839508242478	journal	December 1995
Oriented ferroelectric La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on [001] Pt/SiO ₂ Si substrates using a bismuth titanate template layer Ramesh, R.; Lee, J.; Sands, T. Applied Physics Letters, Vol. 64, Issue 19 https://doi.org/10.1063/1.111557	journal	May 1994
Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO ₂ on SiO ₂ /Si Jia, Q. X.; Arendt, P.; Groves, J. R. Journal of Materials Research, Vol. 13, Issue 9 https://doi.org/10.1557/JMR.1998.0344	journal	September 1998
Oriented conductive oxide electrodes on SiO ₂ /Si Jia, Q. X.; Roper, J. M.; Arendt, P. N. Integrated Ferroelectrics, Vol. 21, Issue 1-4 https://doi.org/10.1080/10584589808202080	journal	September 1998
Ferroelectric La‐Sr‐Co‐O/Pb‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on silicon via template growth Ramesh, R.; Gilchrist, H.; Sands, T. Applied Physics Letters, Vol. 63, Issue 26 https://doi.org/10.1063/1.110106	journal	December 1993
Epitaxial CeO ₂ films as buffer layers for high‐temperature superconducting thin films Wu, X. D.; Dye, R. C.; Muenchausen, R. E. Applied Physics Letters, Vol. 58, Issue 19 https://doi.org/10.1063/1.104994	journal	May 1991
Biaxially oriented conductive La0.5Sr0.5CoO3 thin films on SiO2/Si Jia, Q. X.; Arendt, P. N.; Kwon, C. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3 https://doi.org/10.1116/1.581155	journal	May 1998
Epitaxial growth of highly conductive RuO ₂ thin films on (100) Si Jia, Q. X.; Song, S. G.; Wu, X. D. Applied Physics Letters, Vol. 68, Issue 8 https://doi.org/10.1063/1.115715	journal	February 1996

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Related Subjects

/428/117/
additional
barium
biaxially
cerium
characterized
cobalt
conductive
conductive oxide
cubic
deposited
deposition
dioxide
dioxidesilicon
electrodes
employed
film
forming
glass
including
intermediate
ion-beam-assisted-deposition
lanthanum
layer
layers
material
method
oriented
oxide
oxide electrode
oxide layer
provided
ruthenium
silicon
silicon substrate
sio2si
strontium
structure
structures
substrate
surface
temperature
titanium
yttria-stabilized
zirconia

Oriented conductive oxide electrodes on SiO2/Si and glass

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References (8)

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