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Title: Process for Polycrystalline film silicon growth

Patent ·
OSTI ID:873955
 [1];  [2]
  1. Littleton, CO
  2. Evergreen, CO
+ Show Author Affiliations

A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC36-98GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 6281098
OSTI ID:
873955
Country of Publication:
United States
Language:
English

References (9)

Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process journal January 1965
Electrical Properties of High-Purity Silicon Made from Silicon Tetraiodide journal January 1959
Deposition and Properties of Silicon on Graphite Substrates journal January 1976
Preparation of Pure Silicon by the Hydrogen Reduction of Silicon Tetraiodide journal January 1957
High Purity Silicon journal January 1954
High-Purity Silicon from an Iodide Process Pilot Plant journal January 1960
Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport system journal December 1978
Impurity Introduction during Epitaxial Growth of Silicon journal July 1960
Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System journal April 1980

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Related Subjects

process
polycrystalline
film
silicon
growth
depositing
substrates
including
foreign
occurs
chamber
atmospheric
pressure
temperature
gradient
formed
maintained
throughout
formation
vapor
barrier
precludes
exit
constituent
chemicals
iodine
diiodide
tetraiodide
deposition
beneath
embodiment
blanketing
gas
entrance
oxygen
impurities
capable
repetition
reset
zone
conditions
polycrystalline film
deposition zone
temperature gradient
atmospheric pressure
polycrystalline silicon
crystalline silicon
film silicon
deposition occurs
foreign substrates
/438/117/118/136/423/