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Process for Polycrystalline film silicon growth

Patent ·
OSTI ID:873955
 [1];  [2]
  1. Littleton, CO
  2. Evergreen, CO
+ Show Author Affiliations

A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Research Organization:
Midwest Research Institute
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 6281098
OSTI ID:
873955
Country of Publication:
United States
Language:
English

References (9)

Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process journal January 1965
Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System journal April 1980
High-Purity Silicon from an Iodide Process Pilot Plant journal January 1960
Preparation of Pure Silicon by the Hydrogen Reduction of Silicon Tetraiodide journal January 1957
Deposition and Properties of Silicon on Graphite Substrates journal January 1976
Impurity Introduction during Epitaxial Growth of Silicon journal July 1960
Electrical Properties of High-Purity Silicon Made from Silicon Tetraiodide journal January 1959
High Purity Silicon journal January 1954
Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport system journal December 1978

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Related Subjects

/438/117/118/136/423/
atmospheric
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barrier
beneath
blanketing
capable
chamber
chemicals
conditions
constituent
crystalline silicon
depositing
deposition
deposition occurs
deposition zone
diiodide
embodiment
entrance
exit
film
film silicon
foreign
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formation
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gas
gradient
growth
impurities
including
iodine
maintained
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oxygen
polycrystalline
polycrystalline film
polycrystalline silicon
precludes
pressure
process
repetition
reset
silicon
substrates
temperature
temperature gradient
tetraiodide
throughout
vapor
zone