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Title: Purified silicon production system

Abstract

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174788
Patent Number(s):
6,712,908
Application Number:
10/243,503
Assignee:
Midwest Research Institute (Kansas City, MO) OSTI
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Tihu, and Ciszek, Theodore F. Purified silicon production system. United States: N. p., 2004. Web.
Wang, Tihu, & Ciszek, Theodore F. Purified silicon production system. United States.
Wang, Tihu, and Ciszek, Theodore F. Tue . "Purified silicon production system". United States. https://www.osti.gov/servlets/purl/1174788.
@article{osti_1174788,
title = {Purified silicon production system},
author = {Wang, Tihu and Ciszek, Theodore F.},
abstractNote = {Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 30 00:00:00 EST 2004},
month = {Tue Mar 30 00:00:00 EST 2004}
}

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