Method for depositing layers of high quality semiconductor material
Patent
·
OSTI ID:873931
- Troy, MI
Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- DOE Contract Number:
- ZAK-8-17619-09
- Assignee:
- United Solar Systems Corporation (Troy, MI)
- Patent Number(s):
- US 6274461
- Application Number:
- 09/377,652
- OSTI ID:
- 873931
- Country of Publication:
- United States
- Language:
- English
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Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry
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Related Subjects
method
depositing
layers
quality
semiconductor
material
plasma
deposition
substantially
amorphous
materials
carried
set
parameters
selected
process
operates
near
microcrystalline
threshold
varies
function
thickness
layer
diluent
gas
concentrations
adjusted
composition
instances
profiled
throughout
accordingly
maintain
deposition parameters
semiconductor materials
semiconductor material
semiconductor layer
gas concentration
plasma deposition
amorphous semiconductor
layer thickness
process operates
substantially amorphous
quality semiconductor
gas concentrations
layer composition
diluent gas
depositing layers
/438/
depositing
layers
quality
semiconductor
material
plasma
deposition
substantially
amorphous
materials
carried
set
parameters
selected
process
operates
near
microcrystalline
threshold
varies
function
thickness
layer
diluent
gas
concentrations
adjusted
composition
instances
profiled
throughout
accordingly
maintain
deposition parameters
semiconductor materials
semiconductor material
semiconductor layer
gas concentration
plasma deposition
amorphous semiconductor
layer thickness
process operates
substantially amorphous
quality semiconductor
gas concentrations
layer composition
diluent gas
depositing layers
/438/