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Title: Method for depositing high-quality microcrystalline semiconductor materials

Abstract

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Inventors:
 [1];  [2];  [3]
  1. Bloomfield Hills, MI
  2. Troy, MI
  3. Rochester Hills, MI
Publication Date:
Research Org.:
United Solar Ovonic LLC (Auburn Hills, MI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1018061
Patent Number(s):
7,902,049
Application Number:
10/765,435
Assignee:
United Solar Ovonic LLC (Auburn Hills, MI) OSTI
DOE Contract Number:
ZDJ-2-30630-19
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States: N. p., 2011. Web.
Guha, Subhendu, Yang, Chi C, & Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States.
Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Tue . "Method for depositing high-quality microcrystalline semiconductor materials". United States. doi:. https://www.osti.gov/servlets/purl/1018061.
@article{osti_1018061,
title = {Method for depositing high-quality microcrystalline semiconductor materials},
author = {Guha, Subhendu and Yang, Chi C and Yan, Baojie},
abstractNote = {A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 08 00:00:00 EST 2011},
month = {Tue Mar 08 00:00:00 EST 2011}
}

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