Method for depositing high-quality microcrystalline semiconductor materials
Patent
·
OSTI ID:1018061
- Bloomfield Hills, MI
- Troy, MI
- Rochester Hills, MI
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
- Research Organization:
- United Solar Ovonic LLC (Auburn Hills, MI)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- ZDJ-2-30630-19
- Assignee:
- United Solar Ovonic LLC (Auburn Hills, MI)
- Patent Number(s):
- 7,902,049
- Application Number:
- 10/765,435
- OSTI ID:
- 1018061
- Country of Publication:
- United States
- Language:
- English
Material and solar cell research in microcrystalline silicon
|
journal | July 2003 |
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