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Method of physical vapor deposition of metal oxides on semiconductors

Patent ·
OSTI ID:873663
 [1]
  1. Knoxville, TN
+ Show Author Affiliations
A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.
Research Organization:
LOCKHEED MARTIN ENERGY RES COR
DOE Contract Number:
AC05-96OR22464
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
US 6214712
OSTI ID:
873663
Country of Publication:
United States
Language:
English

References (9)

Thermodynamic stability of binary oxides in contact with silicon journal November 1996
Crystalline Oxides on Silicon: The First Five Monolayers journal October 1998
Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system journal May 1991
Oxygen adsorption on a Ge(100) surface journal December 1982
Epitaxial YBa2Cu3O7 on Biaxially Textured Nickel (001): An Approach to Superconducting Tapes with High Critical Current Density journal November 1996
Oxygen roughening of Ge(001) surfaces journal January 1994
Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation journal February 1997
Growth of (110)‐oriented CeO 2 layers on (100) silicon substrates journal December 1991
Properties of CeO[sub 2] thin films deposited on Si(100) and Si(111) substrates by radio frequency-magnetron sputtering journal May 1998

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