Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition
Conference
·
OSTI ID:751431
- ORNL
We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.
- Research Organization:
- Oak Ridge National Lab., TN (US)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 751431
- Report Number(s):
- ORNL/CP-105770
- Country of Publication:
- United States
- Language:
- English
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