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Photovoltaic devices comprising zinc stannate buffer layer and method for making

Patent ·
OSTI ID:873475
 [1];  [2];  [2]
  1. Golden, CO
  2. Lakewood, CO
+ Show Author Affiliations

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Research Organization:
Midwest Research Institute
DOE Contract Number:
AC36-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 6169246
OSTI ID:
873475
Country of Publication:
United States
Language:
English

References (2)

Large-area CdS/CdTe photovoltaic cells journal January 1988
Electrodeposited CdTe and HgCdTe solar cells journal January 1988

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