Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance
- Vienna, VA
- Rockville, MD
- Albuquerque, NM
A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 6083781
- OSTI ID:
- 873071
- Country of Publication:
- United States
- Language:
- English
The use of multi-species implantation for carrier profile control in GaAs MESFETs fabricated using silicon ion implantation
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book | January 1993 |
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n-type
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