Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

Patent · 01 January 2000

OSTI ID:873071

Zolper, John C ^[1]; Sherwin, Marc E ^[2]; Baca, Albert G ^[3]

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1. Vienna, VA
2. Rockville, MD
3. Albuquerque, NM

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 6083781
• OSTI ID: 873071
• Country of Publication: United States
• Language: English

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compensating
compound
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donor
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p-type
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preferred embodiment
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related
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semiconductor
semiconductor device
semiconductor devices
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sharpen
si-channel
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substantially
tail
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transistor
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type dopant
typically
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