p-buffer layer dependent drift mobility profiles in GaAs metal-semiconductor field-effect transistors
- Toshiba Corp., Kawasaki (Japan)
Mobility profiles in WN{sub x}-LDD (lightly doped drain region) and WN{sub x}-BPLDD (buried p-type buffer lightly doped drain region) GaAs metal-semiconductor field-effect transistor (MESFET) with various p-buffer layers are discussed. The mobility profiles are evaluated using frequency dependent admittance studies. A slightly doped p-buffer layer seems to have no influence on the carrier concentration while there is a significant modification of the mobility profile at lower gate voltages. The channel drift mobility in BPLDD-MESFETs with heavily implanted p-buffer layers is degraded over the whole gate voltage swing. Mg-p-type implants have no effect on the carrier profile near its peak while the tail region is shifted to higher gate voltages. However, to observe a significant sharpening of the channel electron concentration profile a certain amount of Mg implantation dose seems to be necessary.
- OSTI ID:
- 6071029
- Report Number(s):
- CONF-9009402--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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360606* -- Other Materials-- Physical Properties-- (1992-)
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CHANNELING
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ELECTRON MOBILITY
ELECTRONIC CIRCUITS
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
JAPAN
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