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Sharpening of field emitter tips using high-energy ions

Patent ·
OSTI ID:872698
 [1]
  1. Danville, CA
+ Show Author Affiliations
A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5993281
Application Number:
08/872031
OSTI ID:
872698
Country of Publication:
United States
Language:
English

References (2)

Ion bombardment sharpening of field emitter arrays conference January 1995
Modification of field emitter array (FEA) tip shape by focused ion beam irradiation conference August 2002

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