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High-efficiency solar cell and method for fabrication

Patent ·
OSTI ID:872483
 [1];  [1]
  1. Albuquerque, NM
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A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5944913
OSTI ID:
872483
Country of Publication:
United States
Language:
English

References (4)

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance journal February 1996
Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition journal May 1997
Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems conference January 1996
29.5%‐efficient GaInP/GaAs tandem solar cells journal August 1994

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