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Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

Patent ·
OSTI ID:872319
 [1]
  1. Conifer, CO
+ Show Author Affiliations

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Research Organization:
Midwest Research Institute
DOE Contract Number:
AC36-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5909632
OSTI ID:
872319
Country of Publication:
United States
Language:
English

References (2)

Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells journal April 1992
Ohmic contacts and doping of CdTe journal June 1987

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