Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells
- National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States); Department of Physics Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)
Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100&hthinsp;{degree}C to 300&hthinsp;{degree}C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region. {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 700937
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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