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Title: Process for making a cesiated diamond film field emitter and field emitter formed therefrom

Abstract

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

Inventors:
 [1];  [2]
  1. (Batavia, IL)
  2. (Geneva, IL)
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
OSTI Identifier:
872221
Patent Number(s):
US 5888113
Assignee:
Universities Research Association, Inc. (Washington, DC) FNAL
DOE Contract Number:
AC02-76CH03000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; cesiated; diamond; film; field; emitter; formed; therefrom; comprises; depositing; quantity; cesium; iodide; vacuum; 10; -4; torr; -7; increasing; -8; imposing; electron; beam; energy; sufficient; dissociate; incorporate; interstices; prepared; according; operating; voltage; reduced; factor; approximately; relative; conventional; non-cesiated; emitters; formed therefrom; operating voltage; electron beam; diamond film; field emitter; film comprises; field emitters; cesiated diamond; cesium iodide; energy sufficient; film field; emitter formed; /445/313/427/

Citation Formats

Anderson, David F., and Kwan, Simon W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States: N. p., 1999. Web.
Anderson, David F., & Kwan, Simon W. Process for making a cesiated diamond film field emitter and field emitter formed therefrom. United States.
Anderson, David F., and Kwan, Simon W. 1999. "Process for making a cesiated diamond film field emitter and field emitter formed therefrom". United States. doi:. https://www.osti.gov/servlets/purl/872221.
@article{osti_872221,
title = {Process for making a cesiated diamond film field emitter and field emitter formed therefrom},
author = {Anderson, David F. and Kwan, Simon W.},
abstractNote = {A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1999,
month = 1
}

Patent:

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  • A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximatelymore » 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.« less
  • Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processesmore » cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.« less
  • The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable themore » formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.« less
  • The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable themore » formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.« less
  • A nanomechanical near-field grating device is disclosed which includes two sub-gratings vertically spaced by a distance less than or equal to an operating wavelength. Each sub-grating includes a plurality of line-elements spaced apart by a distance less than or equal to the operating wavelength. A light source (e.g., a VCSEL or LED) can provide light at the operating wavelength for operation of the device. The device can operate as an active grating, with the intensity of a reflected or transmitted portion of the light varying as the relative positions of the sub-gratings are controlled by an actuator. The device canmore » also operate as a passive grating, with the relative positions of the sub-gratings changing in response to an environmentally-induced force due to acceleration, impact, shock, vibration, gravity, etc. Since the device can be adapted to sense an acceleration that is directed laterally or vertically, a plurality of devices can be located on a common substrate to form a multi-axis acceleration sensor.« less