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Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

Patent ·
OSTI ID:871916
 [1];  [2]
  1. Livermore, CA
  2. Fremont, CA
+ Show Author Affiliations

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5824602
OSTI ID:
871916
Country of Publication:
United States
Language:
English

References (5)

Electron acceleration in helicon sources journal April 1992
Electron beam pulses produced by helicon‐wave excitation journal June 1995
Chemical and physical sputtering of fluorinated silicon journal February 1995
Etching rate characterization of SiO 2 and Si using ion energy flux and atomic fluorine density in a CF 4 /O 2 /Ar electron cyclotron resonance plasma
  • Ding, J.; Jenq, J. ‐S.; Kim, G. ‐H.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 11, Issue 4 https://doi.org/10.1116/1.578540
journal July 1993
Capacitive, inductive and helicon‐wave modes of operation of a helicon plasma source journal July 1996

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