Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system
Patent
·
OSTI ID:871641
- Clifton Park, NY
- Burnt Hills, NY
A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV
- Research Organization:
- Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY
- DOE Contract Number:
- AC12-76SN00052
- Assignee:
- United States of America as reprresented by United States (Washington, DC)
- Patent Number(s):
- US 5769964
- OSTI ID:
- 871641
- Country of Publication:
- United States
- Language:
- English
| Feasibility assessment of low temperature voltaic energy conversion | report | April 1994 |
Optimum efficiency of single and multiple bandgap cells in thermophotovoltaic energy conversion
|
journal | November 1986 |
Similar Records
Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system
Bridgman growth and characterization of bulk single crystals of Ga{sub 1{minus}x}In{sub x}Sb for thermophotovoltaic applications
Ternary and quaternary antimonide devices for thermophotovoltaic applications
Patent
·
Tue Jun 23 00:00:00 EDT 1998
·
OSTI ID:672531
Bridgman growth and characterization of bulk single crystals of Ga{sub 1{minus}x}In{sub x}Sb for thermophotovoltaic applications
Technical Report
·
Sun Nov 30 23:00:00 EST 1997
·
OSTI ID:319872
Ternary and quaternary antimonide devices for thermophotovoltaic applications
Technical Report
·
Mon Jun 01 00:00:00 EDT 1998
·
OSTI ID:307840
Related Subjects
/136/257/438/
active
active layer
active layers
bandgap
bulk
bulk single
conversion
conversion device
crystal
crystal material
crystal ternary
device
emitter
energy
energy conversion
fabricated
formed
host
iii-v
iii-v semiconductor
lattice-matched
layers
material
method
n-type
n-type material
p-type
photovoltaic energy
quaternary
semiconductor
semiconductor active
single
single crystal
substrate
substrate formed
substrates
ternary
ternary iii-v
thermophotovoltaic
thermophotovoltaic energy
type material
active
active layer
active layers
bandgap
bulk
bulk single
conversion
conversion device
crystal
crystal material
crystal ternary
device
emitter
energy
energy conversion
fabricated
formed
host
iii-v
iii-v semiconductor
lattice-matched
layers
material
method
n-type
n-type material
p-type
photovoltaic energy
quaternary
semiconductor
semiconductor active
single
single crystal
substrate
substrate formed
substrates
ternary
ternary iii-v
thermophotovoltaic
thermophotovoltaic energy
type material