Ternary and quaternary antimonide devices for thermophotovoltaic applications
- Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Lockheed Martin, Inc., Schenectady, NY (United States)
Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts.
- Research Organization:
- Knolls Atomic Power Lab., Schenectady, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307840
- Report Number(s):
- KAPL-P--000083; K--98073; CONF-9805146--; ON: DE99001572
- Country of Publication:
- United States
- Language:
- English
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