Critical illumination condenser for x-ray lithography
- Pleasanton, CA
- Livermore, CA
A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 5737137
- OSTI ID:
- 871460
- Country of Publication:
- United States
- Language:
- English
Laser driver for soft-x-ray projection lithography
|
journal | January 1993 |
Front-end design issues in soft-x-ray projection lithography
|
journal | January 1993 |
X-ray production ~13 nm from laser-produced plasmas for projection x-ray lithography applications
|
journal | January 1993 |
Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography
|
journal | January 1993 |
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