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Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

Patent ·
OSTI ID:871414
 [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations
A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.
Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5726462
OSTI ID:
871414
Country of Publication:
United States
Language:
English

References (16)

Analyse de l'interface oxyde-semiconducteur de AlSb par spectrométrie Auger et diffusion raman journal January 1981
Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering journal December 1977
Fabrication and performance of selectively oxidized vertical-cavity lasers journal November 1995
Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers journal November 1995
Native‐oxide stripe‐geometry In 0.5 (Al x Ga 1− x ) 0.5 P‐In 0.5 Ga 0.5 P heterostructure laser diodes journal July 1991
Planar native‐oxide Al x Ga 1− x As‐GaAs quantum well heterostructure ring laser diodes journal March 1992
Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency journal February 1995
Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes journal March 1994
Planar native‐oxide index‐guided Al x Ga 1− x As‐GaAs quantum well heterostructure lasers journal September 1991
Electrical characterization of thermally grown native oxide on gallium antimonide journal July 1991
Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP journal November 1980
A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air journal April 1994
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers journal July 1994
Quantitative Auger analysis by depth profiling of line shapes: Application to native oxide-InSb interfaces journal July 1985
Light Scattering on Residual Sb Layers Formed After Surface Oxidization of Ga1−xAlxSb journal April 1980
Oxide layers on III–V compound semiconductors journal December 1976

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