Process for preparing silicon carbide foam

Patent · 01 January 1997

OSTI ID:871148

Whinnery, LeRoy Louis ^[1]; Nichols, Monte Carl ^[1]; Wheeler, David Roger ^[2]; Loy, Douglas Anson ^[2]

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1. Livermore, CA
2. Albuquerque, NM

A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 5668188
• OSTI ID: 871148
• Country of Publication: United States
• Language: English

Related Subjects

/423/264/501/502/521/
atmosphere
below
carbide
concentrated
concentrated solution
cooled
cooled below
disclosed
foam
foams
following
following solvent
form
gels
glass
glass transition
induced
induced phase
inert
inert atmosphere
method
monolithic
near
near net
net
net shape
organosilicon
organosilicon polymer
oxygen
oxygen plasma
phase
phase separation
plasma
polymer
polymer foam
polymeric
polymeric gels
porous
precursors
preparing
preparing silicon
pretreated
process
produce
produce polymer
pyrolized
raise
removal
separation
shape
sic
silicon
silicon carbide
solidification
solution
solvent
sufficiently
temperature
thermally
thermally induced
transition
transition temperature