Process for preparing silicon carbide foam
Patent
·
OSTI ID:527777
A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolyzed in an inert atmosphere to form a SiC foam. 9 figs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,668,188/A/
- Application Number:
- PAN: 8-586,453
- OSTI ID:
- 527777
- Resource Relation:
- Other Information: PBD: 16 Sep 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for preparing silicon carbide foam
Silicon Carbide (SiC) Foam for Molten Salt Containment in CSP-GEN3 Systems
Preparation of silicon carbide from organosilicon gels: I. Synthesis and characterization of precursor gels
Patent
·
Wed Jan 01 00:00:00 EST 1997
·
OSTI ID:527777
+1 more
Silicon Carbide (SiC) Foam for Molten Salt Containment in CSP-GEN3 Systems
Technical Report
·
Mon Apr 15 00:00:00 EDT 2019
·
OSTI ID:527777
Preparation of silicon carbide from organosilicon gels: I. Synthesis and characterization of precursor gels
Journal Article
·
Thu Jan 01 00:00:00 EST 1987
· Advanced Ceramic Materials; (USA)
·
OSTI ID:527777
+2 more