Process for preparing silicon carbide foam
Patent
·
OSTI ID:527777
A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolyzed in an inert atmosphere to form a SiC foam. 9 figs.
- Research Organization:
- Sandia Corporation
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,668,188/A/
- Application Number:
- PAN: 8-586,453
- OSTI ID:
- 527777
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for preparing silicon carbide foam
Preparation of silicon carbide from organosilicon gels: I. Synthesis and characterization of precursor gels
Process for preparing fine grain silicon carbide powder
Patent
·
Tue Dec 31 23:00:00 EST 1996
·
OSTI ID:871148
Preparation of silicon carbide from organosilicon gels: I. Synthesis and characterization of precursor gels
Journal Article
·
Wed Dec 31 23:00:00 EST 1986
· Advanced Ceramic Materials; (USA)
·
OSTI ID:6363658
Process for preparing fine grain silicon carbide powder
Patent
·
·
OSTI ID:5447475