skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Processing method for forming dislocation-free SOI and other materials for semiconductor use

Patent ·
OSTI ID:871115
 [1];  [2];  [3]
  1. Oak Ridge, TN
  2. Kingston, TN
  3. Sunnyvale, CA
+ Show Author Affiliations

A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Assignee:
Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5661044
OSTI ID:
871115
Country of Publication:
United States
Language:
English

References (1)

Nucleation and growth of SiO2 precipitates in SOI/SIMOX related materials — Dependence upon damage and atomic oxygen profiles
  • Hemment, P. L. F.; Reeson, K. J.; Robinson, A. K.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 39, Issue 1-4 https://doi.org/10.1016/0168-583X(89)90773-8
journal March 1989

Similar Records

Strain relief mechanism for damage growth during high-dose, O[sup +] implantation of Si
Journal Article · Mon Dec 27 00:00:00 EST 1993 · Applied Physics Letters; (United States) · OSTI ID:871115
Test structures for total dose testing of SOI (silicon-on-insulator) mosfets
Conference · Fri Jan 01 00:00:00 EST 1988 · OSTI ID:871115
Epitaxial GaAs on SOI wafers. Final report, 1 August 1988-31 January 1989
Technical Report · Wed Mar 29 00:00:00 EST 1989 · OSTI ID:871115

Related Subjects

processing
method
forming
dislocation-free
soi
materials
semiconductor
preparing
silicon-on-insulator
material
relatively
defect-free
overlayer
involves
implanting
oxygen
silicon
interruption
oxygen-implanting
step
implant
develops
oxide
layer
beneath
surface
introduced
ion-implanting
relieves
strain
developed
intervening
annealing
relieving
manner
likelihood
formation
strain-induced
defects
reduced
addition
carried
temperatures
heretofore
simox
processes
prior
principles
relieve
negative
induced
lattice
structure
processing method
oxide layer
processing temperatures
lattice structure
annealing step
processing temperature
layer beneath
/438/