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U.S. Department of Energy
Office of Scientific and Technical Information

Enhanced performance CCD output amplifier

Patent ·
OSTI ID:870762
A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM
DOE Contract Number:
W-7405-ENG-36
Assignee:
Regents of Univ. of California Office of Technology Transfer (Alameda, CA)
Patent Number(s):
US 5589881
OSTI ID:
870762
Country of Publication:
United States
Language:
English