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Magnetic filter apparatus and method for generating cold plasma in semicoductor processing

Patent ·
OSTI ID:870553
Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a "cold plasma" which is diffused in the region of the process surface while the ion implantation process takes place.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
Electro-Graph, Inc. (Carlsbad, CA)
Patent Number(s):
US 5545257
OSTI ID:
870553
Country of Publication:
United States
Language:
English

References (2)

Development of a high proton yield plasma source with multipole confinement and a magnetic filter journal August 1987
Effects of internal and external magnetic fields on the characteristics of a magnetic multipole plasma source journal February 1986