Atomic-level imaging, processing and characterization of semiconductor surfaces
A method for selecting and removing single specific atoms from a solid material surface uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe. The photon bias is preferably light or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe and the surface of the solid material to pull the atom out of the lattice and to transfer the atom to the probe. Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Reasearch Institute (Kansas City, MO)
- Patent Number(s):
- 5,444,260
- Application Number:
- 08/087,630
- OSTI ID:
- 870042
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method and apparatus for differential spectroscopic atomic-imaging using scanning tunneling microscopy
Method and apparatus for differential spectroscopic atomic-imaging using scanning tunneling microscopy
Related Subjects
applied
approximately
atom
atomic-level
atoms
barrier
bias
biasing
blowing
bonds
break
catheter
characterization
comprising
effects
electric
electric field
electromagnetic
electromagnetic radiation
energy
extrinsic
field
field potential
frequency
function
gas
gas comprising
hold
hollow
imaging
induce
installed
lattice
light
matches
material
material surface
method
photon
photon bias
photon biasing
polarity
potential
preferably
probe
processing
pull
radiation
reduce
removed
removing
resonates
reversing
selected
selected atom
selecting
selective
semiconductor
semiconductor surface
semiconductor surfaces
single
sites
solid
solid material
species
specific
surface
surfaces
target
thermionic-like
transfer
transferring
vacated
vibration
wave
wavelength