Photodetector with absorbing region having resonant periodic absorption between reflectors
Patent
·
OSTI ID:869751
- Boulder, CO
- Albuquerque, NM
A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.
- Research Organization:
- AT & T CORP
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by Secretary of (Washington, DC)
- Patent Number(s):
- US 5389797
- Application Number:
- 07/943,823
- OSTI ID:
- 869751
- Country of Publication:
- United States
- Language:
- English
Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector
|
journal | August 1990 |
Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium
|
journal | October 1988 |
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Related Subjects
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absorbing
absorbing layer
absorbing layers
absorbing region
absorption
adjacent
adjacent ones
antinodes
apart
barrier
barrier layer
bounded
bulk
cavity
cavity structure
comprised
containing
disposed
distance
enhanced
equal
gaas
gaas layer
heretofore
including
individual
individual ones
ingaas
ingaas layers
layer
layers
location
ones
periodic
photodetector
plurality
positioned
quantum
radiation
radiation absorbing
radiation absorption
reflectors
region
region disposed
resonant
resonant cavity
resonant period
responsive
spaced
spaced apart
spatially
standing
standing wave
strained
strained layer
structure
substantially
substantially equal
therein
unrealized
wavelength
wavelengths
waves
waves therein
absorbing
absorbing layer
absorbing layers
absorbing region
absorption
adjacent
adjacent ones
antinodes
apart
barrier
barrier layer
bounded
bulk
cavity
cavity structure
comprised
containing
disposed
distance
enhanced
equal
gaas
gaas layer
heretofore
including
individual
individual ones
ingaas
ingaas layers
layer
layers
location
ones
periodic
photodetector
plurality
positioned
quantum
radiation
radiation absorbing
radiation absorption
reflectors
region
region disposed
resonant
resonant cavity
resonant period
responsive
spaced
spaced apart
spatially
standing
standing wave
strained
strained layer
structure
substantially
substantially equal
therein
unrealized
wavelength
wavelengths
waves
waves therein