Strain-compensated infrared photodetector and photodetector array
A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.
- Research Organization:
- SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,450,773
- Application Number:
- 12/836,769
- OSTI ID:
- 1083800
- Country of Publication:
- United States
- Language:
- English
Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers
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journal | May 2010 |
nBn detector, an infrared detector with reduced dark current and higher operating temperature
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journal | October 2006 |
Infrared detector epitaxial designs for suppression of surface leakage current
|
conference | January 2010 |
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