Evaporation system and method for gas jet deposition of thin film materials
A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.
- Research Organization:
- Jet Process Corporation, New Haven, CT (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-88ER13818
- Assignee:
- Jet Process Corporation (New Haven, CT)
- Patent Number(s):
- 5,356,673
- Application Number:
- 07/670,693
- OSTI ID:
- 869562
- Resource Relation:
- Patent File Date: 1991 Mar 18
- Country of Publication:
- United States
- Language:
- English
High-quality MNS capacitors prepared by jet vapor deposition at room temperature
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journal | September 1992 |
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