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Crystallization and doping of amorphous silicon on low temperature plastic

Patent ·
OSTI ID:869492
 [1];  [2];  [3];  [4]
  1. Pleasanton, CA
  2. Palo Alto, CA
  3. Campbell, CA
  4. Beaverton, OR
+ Show Author Affiliations
A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5346850
OSTI ID:
869492
Country of Publication:
United States
Language:
English

References (2)

Epitaxial laser crystallization of thin‐film amorphous silicon journal August 1978
Flexible light-Emitting Diode Developed from Conducting Polymers: ▪ Experimental device that operates even when sharply bent represents significant step in semiconductor technology journal June 1992

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/438/
180
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