Method for silicon carbide production by reacting silica with hydrocarbon gas
Patent
·
OSTI ID:869369
- Boulder, CO
A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.
- Research Organization:
- MIDWEST RESEARCH INSTITUTE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5324494
- OSTI ID:
- 869369
- Country of Publication:
- United States
- Language:
- English
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1600
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batch
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carbide
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carbon
carried
characterized
coats
contacted
continuous
continuous process
degree
described
divided
divided silicon
efficient
finely
finely divided
form
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gas
grinding
heated
hydrocarbon
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ingredients
material
method
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particle
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producing silicon
production
pyrolyzes
reacting
reaction
required
silica
silicon
silicon carbide
silicon source
size
source
source material
temperature
yield
1000
1100
1600
400
batch
batch process
carbide
carbide particles
carbon
carried
characterized
coats
contacted
continuous
continuous process
degree
described
divided
divided silicon
efficient
finely
finely divided
form
form silicon
gas
grinding
heated
hydrocarbon
hydrocarbon gas
ingredients
material
method
obtain
particle
particle size
particles
process
producing
producing silicon
production
pyrolyzes
reacting
reaction
required
silica
silicon
silicon carbide
silicon source
size
source
source material
temperature
yield