Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Method for silicon carbide production by reacting silica with hydrocarbon gas

Patent ·
OSTI ID:869369

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Research Organization:
MIDWEST RESEARCH INSTITUTE
DOE Contract Number:
AC02-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5324494
OSTI ID:
869369
Country of Publication:
United States
Language:
English