Method for silicon carbide production by reacting silica with hydrocarbon gas

Patent · Tue Jun 28 00:00:00 EDT 1994

OSTI ID:7029061

Glatzmaier, G C

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute, Kansas City, MO (United States)
• Patent Number(s): A; US 5324494
• Application Number: PPN: US 8-007268
• OSTI ID: 7029061
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CARBIDES
CARBON
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL REACTIONS
COATINGS
DECOMPOSITION
DEPOSITION
ELEMENTS
HEAT TREATMENTS
NONMETALS
PYROLYSIS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
SYNTHESIS
THERMOCHEMICAL PROCESSES