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Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent ·
OSTI ID:868587
 [1];  [2];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
+ Show Author Affiliations

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

Research Organization:
AT & T CORP
DOE Contract Number:
AC04-76DP00789
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5171399
OSTI ID:
868587
Country of Publication:
United States
Language:
English

References (11)

Mass spectrometry during molecular-beam epitaxy: An alternative to reflection high-energy electron diffraction journal March 1988
Surface‐stoichiometry dependence of As 2 desorption and As 4 ‘‘reflection’’ from GaAs(001)
  • Tsao, J. Y.; Brennan, T. M.; Klem, J. F.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.575943
journal May 1989
Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy journal July 1988
Surface stoichiometry and structure of GaAs journal June 1974
Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique journal June 1975
Summary Abstract: Composition of AlGaAs films grown by molecular beam epitaxy journal March 1986
On‐line determination of alloy composition during ternary III/V molecular beam epitaxy journal August 1989
Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface composition journal March 1989
Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs journal March 1989
Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements journal July 1974
The Technology and Physics of Molecular Beam Epitaxy book January 1985

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Related Subjects

/117/
accurate
accurate monitoring
accurately
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advanced
beam
beam epitaxy
changing
composition
control
controlling
device
dynamically
enable
epitaxial
epitaxial growth
epitaxy
extremely
extremely sensitive
flux
fluxes
forming
forming surface
growing
growth
iii-iii-v
iii-v-v
incident
incorporates
intentional
layers
mass
mass spectrometry
measurements
measurements obtained
measuring
method
molecular
molecular beam
monitoring
newly
obtained
on-line
perturbations
precise
precise control
reflected
reflection
responsive
result
semiconductor
semiconductor device
sensitive
spectrometry
spectrometry technique
substrate
surface
surfaces
technique