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Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Abstract

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

Inventors:
 [1];  [2];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
Publication Date:
Research Org.:
AT&T
OSTI Identifier:
868587
Patent Number(s):
US 5171399
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reflection; mass; spectrometry; technique; monitoring; controlling; composition; molecular; beam; epitaxy; method; on-line; accurate; precise; control; epitaxial; growth; iii-iii-v; iii-v-v; layers; advanced; semiconductor; device; incorporates; responsive; intentional; perturbations; fluxes; incident; substrate; accurately; measuring; reflected; flux; extremely; sensitive; growing; surface; measurements; obtained; enable; newly; forming; surfaces; dynamically; changing; result; precise control; extremely sensitive; semiconductor device; molecular beam; mass spectrometry; epitaxial growth; accurately measuring; beam epitaxy; measurements obtained; spectrometry technique; accurate monitoring; forming surface; /117/

Citation Formats

Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States: N. p., 1992. Web.
Brennan, Thomas M, Hammons, B Eugene, & Tsao, Jeffrey Y. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy. United States.
Brennan, Thomas M, Hammons, B Eugene, and Tsao, Jeffrey Y. Wed . "Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/868587.
@article{osti_868587,
title = {Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy},
author = {Brennan, Thomas M and Hammons, B Eugene and Tsao, Jeffrey Y},
abstractNote = {A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.},
doi = {},
url = {https://www.osti.gov/biblio/868587}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Patent:

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