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Title: Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent ·
OSTI ID:868587
 [1];  [2];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
+ Show Author Affiliations

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

Research Organization:
AT&T
DOE Contract Number:
AC04-76DP00789
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5171399
OSTI ID:
868587
Country of Publication:
United States
Language:
English

References (11)

Surface stoichiometry and structure of GaAs journal June 1974
Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface composition journal March 1989
The Technology and Physics of Molecular Beam Epitaxy book January 1985
Surface‐stoichiometry dependence of As 2 desorption and As 4 ‘‘reflection’’ from GaAs(001)
  • Tsao, J. Y.; Brennan, T. M.; Klem, J. F.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.575943
journal May 1989
Mass spectrometry during molecular-beam epitaxy: An alternative to reflection high-energy electron diffraction journal March 1988
Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements journal July 1974
Summary Abstract: Composition of AlGaAs films grown by molecular beam epitaxy journal March 1986
On‐line determination of alloy composition during ternary III/V molecular beam epitaxy journal August 1989
Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs journal March 1989
Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy journal July 1988
Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique journal June 1975

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reflection
mass
spectrometry
technique
monitoring
controlling
composition
molecular
beam
epitaxy
method
on-line
accurate
precise
control
epitaxial
growth
iii-iii-v
iii-v-v
layers
advanced
semiconductor
device
incorporates
responsive
intentional
perturbations
fluxes
incident
substrate
accurately
measuring
reflected
flux
extremely
sensitive
growing
surface
measurements
obtained
enable
newly
forming
surfaces
dynamically
changing
result
precise control
extremely sensitive
semiconductor device
molecular beam
mass spectrometry
epitaxial growth
accurately measuring
beam epitaxy
measurements obtained
spectrometry technique
accurate monitoring
forming surface
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