Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

Patent · Mon Dec 14 23:00:00 EST 1992

OSTI ID:7205480

Brennan, T M; Hammons, B E; Tsao, J Y

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 5171399; A
• Application Number: PPN: US 7-567512
• OSTI ID: 7205480
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400102 -- Chemical & Spectral Procedures
CONTROL
EPITAXY
MASS SPECTROSCOPY
MATERIALS
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
ON-LINE MEASUREMENT SYSTEMS
ON-LINE SYSTEMS
PERFORMANCE
PROCESS CONTROL
SEMICONDUCTOR MATERIALS
SPECTROMETERS
SPECTROSCOPY